CHARACTERIZATION OF INXGA1-XAS1-YPY EPITAXIAL LAYERS AND RELATION TO LATTICE MATCHING

被引：10

作者：

TAMURA, A

OKA, K

INOUE, M

SHIRAFUJI, J

INUISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：479 / 482

页数：4

共 17 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2] CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M [J].

ARAI, S ;

ITAYA, Y ;

SUEMATSU, Y ;

KISHINO, K ;

KATAYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :2067-2068

[3] COMPOSITION DEPENDENCE OF INFLUENCE OF LATTICE MISMATCH ON SURFACE MORPHOLOGY IN LPE GROWTH OF INGAASP ON (100)-INP) [J].

FENG, M ;

TASHIMA, MM ;

WINDHORN, TH ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :533-536

[4]

FENG M, 1979, APPL PHYS LETT, V34, P533

[5] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J].

HORIGUCHI, M ;

OSANAI, H .

ELECTRONICS LETTERS, 1976, 12 (12) :310-312

[6]

HORIGUCHI M, 1977, ELECTRON LETT, V13, P442

[7] INTERNAL-STRESS AND DEGRADATION IN SHORT-WAVELENGTH AIGAAS DOUBLE-HETEROJUNCTION DEVICES [J].

LADANY, I ;

FURMAN, TR ;

MARINELLI, DP .

ELECTRONICS LETTERS, 1979, 15 (12) :342-343

[8]

LOFERSKI JJ, 1961, RCA REV, V22, P38

[9] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J].

MOON, RL ;

ANTYPAS, GA ;

JAMES, LW .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) :635-644

[10] STRUCTURE OF VAPOR-DEPOSITED GAXIN1-XAS CRYSTALS [J].

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3789-3794

← 1 2 →