X-BAND GAAS DOUBLE-DRIFT IMPATT DEVICES

被引：11

作者：

OMORI, M ^{[1
]}

ROSZTOCZY, F ^{[1
]}

HAYASHI, R ^{[1
]}

机构：

[1] VARIAN ASSOC, CORP RES LABS, PALO ALTO, CA 94303 USA

来源：

PROCEEDINGS OF THE IEEE | 1973年 / 61卷 / 02期

关键词：

D O I：

10.1109/PROC.1973.9025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：255 / 256

页数：2

共 7 条

[1] ANALYSIS OF A 100-GHZ DOUBLE-DRIFT IMPATT OSCILLATOR [J].

EVANS, WJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :746-&

[2] GERMANIUM-DOPED GALLIUM ARSENIDE [J].

ROSZTOCZY, FE ;

ERMANIS, F ;

HAYASHI, I ;

SCHWARTZ, B .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :264-+

[3]

ROSZTOCZY FE, 1972, J ELECTROCHEM SOC, V119, pC255

[4] DOUBLE-DRIFT-REGION (P+PNN+) AVALANCHE DIODE OSCILLATORS [J].

SCHARFET.DL ;

EVANS, WJ ;

JOHNSTON, RL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07) :1131-&

[5] DOUBLE-DRIFT-REGION ION-IMPLANTED MILLIMETER-WAVE IMPATT DIODES [J].

SEIDEL, TE ;

DAVIS, RE ;

IGLESIAS, DE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1222-+

[6] HIGH-POWER MILLIMETER WAVE IMPATT OSCILLATORS WITH BOTH HOLE AND ELECTRON DRIFT SPACES MADE BY ION IMPLANTATION [J].

SEIDEL, TE ;

SCHARFET.DL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07) :1135-&

[7] X-BAND SILICON DOUBLE-DRIFT IMPATT DIODES USING MULTIPLE EPITAXY [J].

YING, RS .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1104-&

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