TIME-RESOLVED ELLIPSOMETRY MEASUREMENTS OF THE OPTICAL-PROPERTIES OF SILICON DURING PULSED EXCIMER LASER IRRADIATION

被引：63

作者：

JELLISON, GE

LOWNDES, DH

机构：

来源：

关键词：

D O I：

10.1063/1.96014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：718 / 721

页数：4

共 12 条

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[2] OPTICAL-CONSTANTS FOR SILICON AT 300-K AND 10-K DETERMINED FROM 1.64-EV TO 4.73-EV BY ELLIPSOMETRY
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[3] JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454
[4] JELLISON GE, UNPUB
[5] JELLISON GE, UNPUB APPL OPT
[6] TIME-RESOLVED OPTICAL STUDIES OF SILICON DURING NANOSECOND PULSED-LASER IRRADIATION
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[7] PULSED NEODYMIUM - YTTRIUM ALUMINUM GARNET LASER (532 NM) MELTING OF CRYSTALLINE SILICON - EXPERIMENT AND THEORY
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 258 - 260
[8] SHVAREV KM, 1977, HIGH TEMP+, V15, P548
[9] LASER-INDUCED PERIODIC SURFACE-STRUCTURE .1. THEORY
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[J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1141 - 1154
[10] MACROSCOPIC THEORY OF PULSED-LASER ANNEALING .1. THERMAL TRANSPORT AND MELTING
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