CONDUCTION MECHANISMS IN PD/SIO2/N-SI SCHOTTKY DIODE HYDROGEN DETECTORS

被引：25

作者：

PETTY, MC

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 01期

关键词：

D O I：

10.1016/0038-1101(86)90202-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：89 / 97

页数：9

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共 34 条

[31] EFFECT OF VARIOUS SUBSTRATES ON THE HYDROGEN SENSITIVITY OF PALLADIUM-SEMICONDUCTOR DIODES
YAMAMOTO, N
TONOMURA, S
MATSUOKA, T
TSUBOMURA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6227 - 6330
[32] STUDY ON A PALLADIUM-TITANIUM OXIDE SCHOTTKY DIODE AS A DETECTOR FOR GASEOUS COMPONENTS
YAMAMOTO, N
TONOMURA, S
MATSUOKA, T
TSUBOMURA, H
[J]. SURFACE SCIENCE, 1980, 92 (2-3) : 400 - 406
[33] PD-INP SCHOTTKY DIODE HYDROGEN SENSORS
YOUSUF, M
KULIYEV, B
LALEVIC, B
POTEAT, TL
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (08) : 753 - 758
[34] SURFACE EFFECTS ON METAL-SILICON CONTACTS
YU, AYC
SNOW, EH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3008 - +

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