STABILITY OF SCHOTTKY BARRIERS AT HIGH-TEMPERATURES FOR USE IN GAAS-MESFET TECHNOLOGY

被引：7

作者：

ALLAN, DA

机构：

[1] British Telecom Research Lab, Ipswich, Engl, British Telecom Research Lab, Ipswich, Engl

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1986年 / 133卷 / 01期

关键词：

D O I：

10.1049/ip-i-1.1986.0004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：18 / 24

页数：7

共 16 条

[1] THE CHARACTERIZATION OF GAAS NIAUGE OHMIC CONTACTS ALLOYED WITH AN SIO2 OVERLAYER FOR USE IN AN ION-IMPLANTED MESFET TECHNOLOGY [J].

ALLAN, DA ;

THORP, SC .

PHYSICA B & C, 1985, 129 (1-3) :445-449

[2]

ALLAN DA, 1985, AUG P INT SEM TECHN

[3]

BELLIER S, 1975, P RELIABILITY PHYSIC, P193

[4]

BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[5] THERMAL AGING OF AL THIN-FILMS ON GAAS [J].

JOHNSON, NM ;

MAGEE, TJ ;

PENG, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :838-842

[6]

KOHN E, 1979, P INT ELECTRON DEVIC, P469

[7] EFFECT OF PHASE-SEPARATION ON THE ELECTRICAL-PROPERTIES OF THE INTERFACE BETWEEN NI-TA THIN-FILMS AND GAAS SUBSTRATE [J].

LAHAV, A ;

EIZENBERG, M .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :430-432

[8]

LEE RE, 1982, PATHOLOGY GAUCHER DI, P177

[9]

MUKERJEE SD, 1979, J VAC SCI TECHNOL, V16, P138

[10] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].

OHNISHI, T ;

YOKOYAMA, N ;

ONODERA, H ;

SUZUKI, S ;

SHIBATOMI, A .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :600-602

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