SYNCHROTRON SECTION TOPOGRAPHIC STUDY OF CZOCHRALSKI-GROWN SILICON-WAFERS FOR ADVANCED MEMORY-CIRCUITS

被引：6

作者：

TUOMI, T

TUOMINEN, M

PRIEUR, E

PARTANEN, J

LAHTINEN, J

LAAKKONEN, J

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

[2] OUTOKUMPU SEMITRON AB,S-16111 BROMMA,SWEDEN

[3] EUROPEAN SYNCHROTRON RADIAT FACIL,DIV EXPERIMENTS,F-38043 GRENOBLE,FRANCE

[4] UNIV TURKU,DEPT APPL PHYS,SF-20500 TURKU,FINLAND

[5] OKMET OY,SF-02631 ESPOO,FINLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 05期

关键词：

D O I：

10.1149/1.2048642

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Silicon wafers especially prepared to meet a customer's needs in the production of semiconductor memory circuits are studied with synchrotron section topography. A well-defined uniform denuded zone below the surface with a width of 12 to 24 mu m is observed. The concentration and the size of the oxygen-related defects in the bulk are independent of the location along the crystal ingot, from which the wafer originates, and of that along the wafer diameter.

引用

页码：1699 / 1701

页数：3

共 6 条

[1] EFFECTS OF VARIOUS PRE-INTRINSIC AND PHOSPHORUS DIFFUSION GETTERING TREATMENTS UPON QUALITY OF CZOCHRALSKI SILICON-WAFER SURFACE DURING A SIMULATED 4-MEGABIT DYNAMIC RANDOM-ACCESS MEMORY PROCESS [J].