DEPENDENCE OF THE DIFFUSION CURRENT ON THE DEGREE OF POLYMERIZATION OF NITROCELLULOSE IN ACETONE-ISOPROPYL ALCOHOL

被引:7
作者
MIZUGUCHI, J
机构
关键词
D O I
10.1149/1.2124197
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1520 / 1523
页数:4
相关论文
共 13 条
[1]   INGAASP-INP PLANAR-STRIPE LASERS FABRICATED BY WET CHEMICAL ETCHING [J].
ADACHI, S ;
KAWAGUCHI, H .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3176-3178
[2]   CHEMICAL ETCHING OF INP AND INGAASP INP [J].
ADACHI, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) :609-613
[3]   INTEGRATED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J].
HURWITZ, CE ;
ROSSI, JA ;
HSIEH, JJ ;
WOLFE, CM .
APPLIED PHYSICS LETTERS, 1975, 27 (04) :241-243
[4]  
IGA K, 1980, ELECTRON LETT, V16, P831, DOI 10.1049/el:19800590
[5]   GAINASP-INP DH LASERS WITH A CHEMICALLY ETCHED FACET [J].
IGA, K ;
POLLACK, MA ;
MILLER, BI ;
MARTIN, RJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (10) :1044-1047
[6]   EMBEDDED-STRIPE GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH POLYCRYSTALLINE GAASP LAYERS .2. LASERS WITH ETCHED MIRRORS [J].
ITOH, K ;
ASAHI, K ;
INOUE, M ;
TERAMOTO, I .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :628-631
[7]   GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING [J].
MERZ, JL ;
LOGAN, RA ;
SERGENT, AM .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) :72-82
[8]   GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING [J].
MERZ, JL ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3503-3509
[9]   GAINASP-INP STRIPE LASERS WITH ETCHED MIRRORS FABRICATED BY A WET CHEMICAL ETCH [J].
MILLER, BI ;
IGA, K .
APPLIED PHYSICS LETTERS, 1980, 37 (04) :339-341
[10]   BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].
NAHORY, RE ;
POLLACK, MA ;
JOHNSTON, WD ;
BARNS, RL .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :659-661