SEMICONDUCTOR-LASERS FOR OPTICAL COMMUNICATION

被引：9

作者：

SELWAY, PR ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1976年 / 123卷 / 06期

关键词：

D O I：

10.1049/piee.1976.0136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：609 / 618

页数：10

共 96 条

[1]

Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739

[2] GAAS-GAALAS DISTRIBUTED-FEEDBACK DIODE LASERS WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].

AIKI, K ;

NAKAMURA, M ;

UMEDA, J ;

YARIV, A ;

KATZIR, A ;

YEN, HW .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :145-146

[3]

ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1289

[4]

ARMSTRONG JA, 1965, PHYS REV A, V140, P155

[5] DYNAMICS OF INJECTION LASERS [J].

BASOV, NG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) :855-+

[6] OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS [J].

BLUM, JM ;

MCGRODDY, JC ;

MCMULLIN, PG ;

SHIH, KK ;

SMITH, AW ;

ZIEGLER, JF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :413-418

[7] DYNAMIC BEHAVIOR OF SEMICONDUCTOR LASERS [J].

BOERS, PM ;

VLAARDINGERBROEK, MT .

ELECTRONICS LETTERS, 1975, 11 (10) :206-208

[8] STUDY OF SINGLE-MODE INJECTION LASER [J].

BOGATOV, AP ;

ELISEEV, PG ;

IVANOV, LP ;

LOGGINOV, AS ;

MANKO, MA ;

SENATOROV, KY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :392-394

[9] ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS [J].

BURNHAM, RD ;

SCIFRES, DR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :510-511

[10] SINGLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK GAAS-DIODE LASERS [J].

BURNHAM, RD ;

SCIFRES, DR ;

STREIFER, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :439-449

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