TETRAHEDRAL SEMICONDUCTORS - CONSTANCY OF THE MIDGAP ENERGIES WITH RESPECT TO THE VACUUM LEVEL

被引：19

作者：

MENENDEZ, J

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.38.6305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6305 / 6307

页数：3

共 29 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] INEQUALITY OF SEMICONDUCTOR HETEROJUNCTION CONDUCTION-BAND-EDGE DISCONTINUITY AND ELECTRON-AFFINITY DIFFERENCE [J].

BAUER, RS ;

ZURCHER, P ;

SANG, HW .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :663-665

[3] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[4] ENERGY BARRIERS AND INTERFACE STATES AT HETEROJUNCTIONS [J].

FLORES, F ;

TEJEDOR, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (04) :731-749

[5] DEFECTIVE HETEROJUNCTION MODELS [J].

FREEOUF, JL ;

WOODALL, JM .

SURFACE SCIENCE, 1986, 168 (1-3) :518-530

[6] X-RAY PHOTOEMISSION CORE LEVEL DETERMINATION OF THE GASB/ALSB HETEROJUNCTION VALENCE-BAND DISCONTINUITY [J].

GUALTIERI, GJ ;

SCHWARTZ, GP ;

NUZZO, RG ;

SUNDER, WA .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1037-1039

[7] TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES [J].

HARRISON, WA ;

TERSOFF, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1068-1073

[8]

KROEMER H, 1987, MOL BEAM EPITAXY HET, P331

[9] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS [J].

LANGER, JM ;

HEINRICH, H .

PHYSICAL REVIEW LETTERS, 1985, 55 (13) :1414-1417

[10] ROLE OF DANGLING BONDS AT SCHOTTKY BARRIERS AND SEMICONDUCTOR HETEROJUNCTIONS [J].

LEFEBVRE, I ;

LANNOO, M ;

PRIESTER, C ;

ALLAN, G ;

DELERUE, C .

PHYSICAL REVIEW B, 1987, 36 (02) :1336-1339

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