ROLE OF DANGLING BONDS AT SCHOTTKY BARRIERS AND SEMICONDUCTOR HETEROJUNCTIONS

被引：49

作者：

LEFEBVRE, I

LANNOO, M

PRIESTER, C

ALLAN, G

DELERUE, C

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.36.1336

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1336 / 1339

页数：4

共 13 条

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