PRODUCTION OF HIGHLY OXIDIZED AS ON GAAS (110) AT 20-K

被引：11

作者：

ANDERSON, SG

SEO, JM

KOMEDA, T

CAPASSO, C

WEAVER, JH

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期

关键词：

D O I：

10.1063/1.103259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution synchrotron radiation photoemission results for O 2 physisorbed on GaAs (110) show Ga-O and As-O formation that is a direct result of photon-induced reaction at 20 K. Spatially resolved studies show that the thickness and chemical composition of the semiconductor oxides vary in proporition to total beam irradiation. The extent of reaction can be controlled by varying the amount of oxygen present on the surface, and As 5+-like bonding configurations can be formed. These results can only be understood when competition between thermodynamic, kinetic, photon- and electron-mediated processes are considered.

引用

页码：2510 / 2512

页数：3

共 26 条

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