MAGNETIC CIRCULAR-DICHROISM OF THE DX CENTER IN AL0.35GA0.65AS-TE

被引:11
作者
PEALE, RE
MOCHIZUKI, Y
SUN, H
WATKINS, GD
机构
[1] Sherman Fairchild Laboratory 161, Lehigh University, Bethlehem
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 11期
关键词
D O I
10.1103/PhysRevB.45.5933
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magneto-optical absorption spectra of 0.4-mm-thick, single-crystal Al0.35Ga0.65As:Te give evidence for two bleachable absorbers, one of which is identified as the DX center. The bleached-state absorption coefficient and magnetic circular dichroism (MCD), measured from 0.66 to 2.2-mu-m at 1.7 K, are adequately described by the Drude free-electron model. Cooling the sample in darkness leads to transmission transients, from which ground-state absorption coefficients and optical-conversion cross sections for the bleachable absorbers are derived. The conversion threshold is 0.6 eV for the DX and 1.5 eV for the second bleacher, and the recovery behavior is significantly different for the two. The MCD at the beginning of each transient is identified with the ground state of each absorber, and temperature dependence reveals that the bulk of the initial MCD has a nonparamagnetic origin. We conclude that the paramagnetic contribution to the MCD from the DX ground state is very small, being less than 0.004% of its peak absorption coefficient at T = 1.7 K and B = 2 T. This provides strong support to the diamagnetic-ground-state, negative-U model of Chadi and Chang. The origin of the second bleachable absorber has not been established.
引用
收藏
页码:5933 / 5943
页数:11
相关论文
共 55 条
[1]   MAGNETO-OPTICAL STUDIES OF ATOMIC THALLIUM CENTERS IN KCL - MAGNETIC CIRCULAR-DICHROISM TAGGED BY SPIN-RESONANCE [J].
AHLERS, FJ ;
LOHSE, F ;
SPAETH, JM ;
MOLLENAUER, LF .
PHYSICAL REVIEW B, 1983, 28 (03) :1249-1255
[2]  
ALLEN JW, 1962, P PHYS SOC LOND, V82, P315
[3]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[4]   OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J].
BALSLEV, I .
PHYSICAL REVIEW, 1968, 173 (03) :762-&
[5]   ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE [J].
BECKER, WM ;
FAN, HY ;
RAMDAS, AK .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2094-&
[6]   EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS - REPLY [J].
CHADI, DJ ;
CHANG, KJ ;
WALUKIEWICZ, W .
PHYSICAL REVIEW LETTERS, 1989, 62 (16) :1923-1923
[7]   THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876
[8]  
CHADI DJ, 1989, PHYS REV B, V39, P10366
[9]  
DABROWSKI J, 1990, PHYSICS SEMICONDUCTO, V1, P489
[10]   LARGE-LATTICE-RELAXATION VERSUS SMALL-LATTICE-RELAXATION MODELS OF THE DX CENTERS IN GA1-XALXAS [J].
DMOCHOWSKI, JE ;
LANGER, JM ;
RACZYNSKA, J ;
JANTSCH, W .
PHYSICAL REVIEW B, 1988, 38 (05) :3276-3279