H-PASSIVATION OF SHALLOW ACCEPTORS IN SI STUDIED BY USE OF THE PERTURBED-GAMMA-GAMMA-ANGULAR-CORRELATION TECHNIQUE

被引：15

作者：

SKUDLIK, H ^{[1
]}

DEICHER, M ^{[1
]}

KELLER, R ^{[1
]}

MAGERLE, R ^{[1
]}

PFEIFFER, W ^{[1
]}

PROSS, P ^{[1
]}

RECKNAGEL, E ^{[1
]}

WICHERT, T ^{[1
]}

机构：

[1] UNIV SAARLAND,W-6600 SAARBRUCKEN,GERMANY

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.46.2172

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With the radioactive probe atom In-111 as a representative for shallow acceptors in Si the passivation of acceptors by H was studied by using the perturbed-gamma-gamma-angular-correlation technique. It is shown that during passivation, close In-H pairs are formed and that the number of pairs exactly accounts for the number of deactivated acceptors. The formation of In-H pairs was investigated with use of different hydrogenation techniques and the stability of acceptor-H pairs was studied in isochronal annealing experiments.

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页码：2172 / 2182

页数：11

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