A STUDY OF THE MAJORITY CARRIER MOBILITY IN HYDROGENATED BORON-DOPED SILICON

被引:3
作者
CHARI, A
AUCOUTURIER, M
机构
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D O I
10.1016/0038-1098(89)90444-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:105 / 109
页数:5
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共 17 条
[1]  
Brooks H., 1955, ADV ELECTRON, V7, P85
[2]   HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J].
CAPIZZI, M ;
MITTIGA, A .
APPLIED PHYSICS LETTERS, 1987, 50 (14) :918-920
[3]  
CHARI A, 1987, ANN CHIM-SCI MAT, V12, P357
[4]  
CHEVALLIER J, 1988, ANNU REV MATER SCI, V18, P219
[5]  
DRESSELHAUS E, 1954, PHYS REV, V96, P833
[6]  
JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166
[7]   DEUTERIUM AT THE SI-SIO2 INTERFACE DETECTED BY SECONDARY-ION MASS-SPECTROMETRY [J].
JOHNSON, NM ;
BIEGELSEN, DK ;
MOYER, MD ;
DELINE, VR ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :995-997
[8]   MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].
JOHNSON, NM .
PHYSICAL REVIEW B, 1985, 31 (08) :5525-5528
[9]  
KAZMERSKI LL, 1985, 18TH IEEE PHOT SPEC, P993
[10]   HYDROGEN PASSIVATION OF ELECTRICALLY ACTIVE DEFECTS IN SOLAR-CELLS MADE FROM RAD POLYCRYSTALLINE SILICON RIBBONS [J].
MAUTREF, M ;
LACROIX, C ;
BELOUET, C ;
FAGES, C ;
BIOTTEAU, B ;
ARNOULT, F .
REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (04) :333-342