THEORY OF H SITES IN UNDOPED CRYSTALLINE SEMICONDUCTORS

被引:3
作者
BONAPASTA, AA
机构
[1] National Council Research (CNR), ITSE, 00016 Monterotondo Scalo, V. Salaria Km. 29
来源
PHYSICA B | 1991年 / 170卷 / 1-4期
关键词
D O I
10.1016/0921-4526(91)90120-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The equilibrium sites of atomic hydrogen and muonium in both doped and undoped elemental semiconductors, as investigated by means of several theoretical methods and experimental techniques, are outlined. A particular emphasis is given to the undoped c-Si results. Two controversial points regarding the H and muonium equilibrium sites have been carefully discussed. The bond centered model has been favored with respect to the vacancy associated one. The T site quite reasonably results to be a metastable site and the most favored candidate for the normal muonium center.
引用
收藏
页码:168 / 180
页数:13
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