ENERGETICS AND DEEP LEVELS OF INTERSTITIAL DEFECTS IN THE COMPOUND SEMICONDUCTORS GAAS, ALAS, ZNSE, AND ZNTE

被引：23

作者：

JANSEN, RW ^{[1
]}

WOLDEKIDANE, DS ^{[1
]}

SANKEY, OF ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2415 / 2421

页数：7

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共 26 条

[1] DIFFUSION OF ZINC INTO GA1-XALXAS
AGENO, SK
ROEDEL, RJ
MELLEN, N
ESCHER, JS
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1193 - 1195
[2] MIGRATION OF INTERSTITIALS IN SILICON
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3460 - 3469
[3] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330
[4] THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON
BARAFF, GA
SCHLUTER, M
ALLAN, G
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (10) : 739 - 742
[5] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7346 - 7348
[6] BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL
BARYAM, Y
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1129 - 1132
[7] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON
CAR, R
KELLY, PJ
OSHIYAMA, A
PANTELIDES, ST
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1814 - 1817
[8] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
CEPERLEY, DM
ALDER, BJ
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
[9] NORM-CONSERVING PSEUDOPOTENTIALS
HAMANN, DR
SCHLUTER, M
CHIANG, C
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (20) : 1494 - 1497
[10] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS
HJALMARSON, HP
VOGL, P
WOLFORD, DJ
DOW, JD
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 810 - 813