PULSED LASER-INDUCED MELTING FOLLOWED BY QUENCHING OF SILICON FILMS

Amorphization and crystallization were studied through laser-induced melting of silicon films formed on quartz substrates induced by irradiation with a 30 ns XeCl excimer laser. Homogeneous and rapid solidification occurs and amorphous solid state can be formed when the melt duration is long enough to make the temperature gradient in liquid silicon lower than 1 X 10(5) K/cm at the Si/quartz interface. The solid state after homogeneous solidification is governed by recalescence caused by latent heat released at solidification. A completely amorphous state is formed when film thickness is thinner than 24 nm because latent heat reduces as film thickness decreases. Both crystalline and amorphous states were observed for film thickness above 24 nm because recalescence can cause crystalline grain growth. Complete crystallization occurs through interface controlled growth when the temperature gradient is higher than 1 X 10(5) K/cm. The velocity of liquid/solid interface is 0.6 m/s, which is too low to cause amorphization.