LAYER-BY-LAYER GROWTH OF GAAS STUDIED BY GLANCING ANGLE SCATTERING OF FAST IONS

被引：30

作者：

FUJII, Y ^{[1
]}

NARUMI, K ^{[1
]}

KIMURA, K ^{[1
]}

MANNAMI, M ^{[1
]}

HASHIMOTO, T ^{[1
]}

OGAWA, K ^{[1
]}

OHTANI, F ^{[1
]}

YOSHIDA, T ^{[1
]}

ASARI, M ^{[1
]}

机构：

[1] SHIMADZU CO LTD,KEIHANNA RES LAB,SEIKA,KYOTO 61902,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 15期

关键词：

D O I：

10.1063/1.110595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Angular distribution of scattered ions at glancing angle incidence of 3 keV He ions on a (001) surface of GaAs is studied during its molecular beam epitaxial growth. We report observation of intensity oscillations of the scattered ions from the growing surface. The period of the oscillations corresponds to the growth time of one monomolecular layer. The oscillations of the intensity is due to the oscillatory change in surface step density during layer-by-layer growth of the surface. This observation is in agreement with the intensity oscillations of reflection high-energy electron diffraction (RHEED) from epitaxially growing surface of GaAs.

引用

页码：2070 / 2072

页数：3

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