HALL-EFFECT AND CONDUCTIVITY MEASUREMENTS OF ZINC-OXIDE SINGLE-CRYSTALS WITH OXYGEN VACANCIES AS DONORS

被引:34
作者
UTSCH, B [1 ]
HAUSMANN, A [1 ]
机构
[1] RHEIN WESTFAL TECH HSCH, PHYS INST 2, TEMPLERGRABEN 55, D-5100 AACHEN, FED REP GER
来源
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1975年 / 21卷 / 01期
关键词
D O I
10.1007/BF01315071
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:27 / 31
页数:5
相关论文
共 14 条
[2]   IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].
CONWELL, EM .
PHYSICAL REVIEW, 1956, 103 (01) :51-60
[3]   COMPENSATION DEPENDENCE OF IMPURITY CONDUCTION IN ANTIMONY-DOPED GERMANIUM [J].
DAVIS, EA ;
COMPTON, WD .
PHYSICAL REVIEW, 1965, 140 (6A) :2183-&
[4]   ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J].
FRITZSCHE, H .
PHYSICAL REVIEW, 1955, 99 (02) :406-419
[5]   CONCENTRATION AND MOBILITY OF ELECTRONS IN INDIUM DOPED ZINC OXIDE CRYSTALS [J].
HAUSMANN, A ;
TEUERLE, W .
ZEITSCHRIFT FUR PHYSIK, 1972, 257 (04) :299-309
[6]   HALL-EFFECT OF PURE AND COPPER DOPED ZINC OXIDE CRYSTALS [J].
HAUSMANN, A ;
TEUERLE, W .
ZEITSCHRIFT FUR PHYSIK, 1973, 259 (02) :189-194
[7]   AN F-CENTER AS A PARAMAGNETIC DONOR IN ZINC OXIDE [J].
HAUSMANN, A .
ZEITSCHRIFT FUR PHYSIK, 1970, 237 (01) :86-&
[8]   HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS [J].
HUTSON, AR .
PHYSICAL REVIEW, 1957, 108 (02) :222-230
[9]   ELECTRONIC PROPERTIES OF ZNO [J].
HUTSON, AR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :467-472
[10]  
KULP BA, 1965, PHYS REV A, V140, P252