1-MBIT VIRTUALLY STATIC RAM

被引:3
作者
NOGAMI, K
SAKURAI, T
SAWADA, K
WADA, T
SATO, K
ISOBE, M
KAKUMU, M
MORITA, S
YOKOGAWA, S
KINUGAWA, M
ASAMI, T
HASHIMOTO, K
MATSUNAGA, JI
NOZAWA, H
IIZUKA, T
机构
关键词
D O I
10.1109/JSSC.1986.1052592
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:662 / 669
页数:8
相关论文
共 11 条
[1]  
BARBER FE, 1985, FEB ISSCC, P44
[2]  
HSIEH CM, 1981, APR P IEEE INT REL P, P38
[3]  
Kinugawa M., 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers, P116
[4]   THE DESIGN AND PERFORMANCE OF CMOS 256K BIT DRAM DEVICES [J].
MOHSEN, A ;
KUNG, RI ;
SIMONSEN, CJ ;
SCHUTZ, J ;
MADLAND, PD ;
HAMDY, EZ ;
BOHR, MT .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (05) :610-618
[5]   HOT-CARRIER GENERATION IN SUBMICROMETER VLSI ENVIRONMENT [J].
SAKURAI, T ;
NOGAMI, K ;
KAKUMU, M ;
IIZUKA, T .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (01) :187-192
[6]  
SAKURAI T, 1984, FEB IEEE ISSCC, P214
[7]  
SAKURAI T, 1985, FEB IEEE ISSCC, P272
[8]  
SAKURAI T, 1983, 15TH P C SOL STAT DE, P269
[9]  
SAKURAI T, 1986, FEB ISSCC, P252
[10]  
Sawada K., 1986, 1986 Symposium on VLSI Technology. Digest of Technical Papers, P85