ACCURATE DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE QUANTUM-WELL USING DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：34

作者：

LETARTRE, X ^{[1
]}

STIEVENARD, D ^{[1
]}

BARBIER, E ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 10期

关键词：

D O I：

10.1063/1.104419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using deep level transient spectroscopy, we have determined the band offset of a GaAs/GaInAs/GaAs single quantum well. To interpret the data, we propose an original model which takes into account the fact that the emission rate of electrons depends on the charge density in the well, and thus varies continuously during the emission process, contrary to previous models. The validity of the analysis is tested with success by using capacitance-voltage measurement to determine the band offset.

引用

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页码：1047 / 1049

页数：3

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