THE CUTOFF WAVELENGTH AND MINORITY-CARRIER LIFETIME IN IMPLANTED N+-ON-BULK-P HG1-XCDXTE PHOTODIODES

被引：29

作者：

NEMIROVSKY, Y

ROSENFELD, D

机构：

来源：

关键词：

D O I：

10.1063/1.341039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2435 / 2439

页数：5

共 13 条

[1]

BLAKEMORE JS, 1960, SEMICONDUCTOR STATIS

CAPORALETTI, O ;

MICKLETHWAITE, WFH .

[3]

ELABD H, 1982, VLSI ELECTRONICS MIC, V5, P228

[4] ELECTRICAL-PROPERTIES OF SHALLOW LEVELS IN P-TYPE HGCDTE [J].

FINKMAN, E ;

NEMIROVSKY, Y .

[5] THE EXPONENTIAL OPTICAL-ABSORPTION BAND TAIL OF HG1-XCDXTE [J].

FINKMAN, E ;

SCHACHAM, SE .

[6]

KRUSE PW, 1981, SEMICONDUCT SEMIMET, V18, P1

LEVY, D ;

SCHACHAM, SE ;

KIDRON, I .

[8]

LEVY D, 1985, THESIS TECHNION IIT

[9]

MICKLETHWAITE WFH, 1987, J APPL PHYS, V63, P2382

[10]

MICKLETHWAITE WFH, 1981, SEMICONDUCT SEMIMET, V18, P48