RELIABILITY STUDIES OF PLANAR SILICON DETECTORS

被引：6

作者：

GOESSLING, C

HEIJNE, EHM

JARRON, P

PARKER, HA

REDAELLI, N

ROSSI, L

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 01期

关键词：

D O I：

10.1109/TNS.1986.4337098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：272 / 278

页数：7

共 10 条

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[2]

DIETL H, 1985, EUROPHYSICS C HIGH E

[3]

ERIK HM, 1984, NUCL INSTR METH, V226, P63

[4]

ERIK HM, 1983, 1980 P MIN DET PIS C

[5] A SILICON SURFACE-BARRIER MICROSTRIP DETECTOR DESIGNED FOR HIGH-ENERGY PHYSICS [J].

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HUBBELING, L ;

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[6]

KEMMER J, 1982, IEEE T NUCL SCI, V29, P733, DOI 10.1109/TNS.1982.4335947

[7]

KEMMER J, 1984, NUCL INSTRUM METH A, V226, P89, DOI 10.1016/0168-9002(84)90173-6

[8]

Nicollian E. H., 1982, METAL OXIDE SEMICOND

[9] ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED N-TYPE SILICON [J].

SIGFRIDSSON, B ;

LINDSTROM, JL .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4611-4620

[10] CORRELATION OF DISPLACEMENT EFFECTS PRODUCED BY ELECTRONS PROTONS AND NEUTRONS IN SILICON [J].

VANLINT, VAJ ;

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BARENGOLTZ, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2663-2668

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