ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED N-TYPE SILICON

被引：16

作者：

SIGFRIDSSON, B ^{[1
]}

LINDSTROM, JL ^{[1
]}

机构：

[1] NATL DEF RES INST,S-10450 STOCKHOLM,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 10期

关键词：

D O I：

10.1063/1.322387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4611 / 4620

页数：10

共 24 条

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SAH, CT .

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[5] STUDY OF DIVACANCY IN IRRADIATED SILICON USING INFRARED SPECTROSCOPY AND INFRARED PHOTOCONDUCTIVITY MEASUREMENTS [J].

CORELLI, JC ;

YOUNG, RC ;

CHEN, CS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :128-&

[6] RECOMBINATION STUDIES ON GAMMA-IRRADIATED N-TYPE SILICON [J].

CURTIS, OL ;

SROUR, JR ;

RAUCH, RB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4638-+

[7]

DEANGELIS HB, 1972, ORIC INT C, P245

[8] MOBILITY IN EPITAXIAL GAAS UNDER 1-MEV ELECTRON-IRRADIATION [J].

DRESNER, J .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :4118-4119

[9] CHARACTERISTICS OF INFRARED PHOTODETECTORS PRODUCED BY RADIATION DOPING [J].

GROSS, C ;

MATTAUCH, RJ ;

VIOLA, TJ .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :735-739

[10]

HAKANSSON H, 1975, FOA REPORTS, V9, P1

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