RECOMBINATION STUDIES ON GAMMA-IRRADIATED N-TYPE SILICON

被引：10

作者：

CURTIS, OL

SROUR, JR

RAUCH, RB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.1660980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4638 / +

页数：1

共 28 条

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[9] EFFECT OF INJECTION LEVEL ON CARRIER LIFETIME IN NEUTRON-IRRADIATED GERMANIUM [J].

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[10] RECOMBINATION IN GAMMA-IRRADIATED SILICON [J].

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