PHOTOLUMINESCENCE OF SM DOPED POROUS SILICON - EVIDENCE FOR LIGHT-EMISSION THROUGH LUMINESCENCE-CENTERS IN SIO2 LAYERS

被引：26

作者：

LIN, J ^{[1
]}

ZHANG, LZ ^{[1
]}

HUANG, YM ^{[1
]}

ZHANG, BR ^{[1
]}

QIN, GG ^{[1
]}

机构：

[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

After oxidation promoted by gamma-ray irradiation, in the photoluminescence (PL) spectra of Sm doped porous silicon (PS), there are three sharp peaks, superimposed on a broad band, with wavelengths near to those of the Sm doped SiO2 [R. Morimo, T. Mizushima, and H. Okumura, J. Electrochem. Soc. 137, 2340 (1990)]. The experimental results indicate that Sm-related luminescence centers can be created within the oxide of porous silicon, and only in porous silicon with high porosity can the Sm-related luminescence be found in the SiO2 layer. This experimental result can be explained by the fact that the excitation of electron-hole pairs occurs in nanoscale silicon, and the recombination occurs at the Sm-related luminescence centers in SiO2 layers covering nanoscale silicon.

引用

页码：3282 / 3284

页数：3

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