JOSEPHSON TUNNEL-JUNCTIONS WITH REFRACTORY ELECTRODES

被引:19
作者
RAIDER, SI
机构
关键词
D O I
10.1109/TMAG.1985.1063615
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:110 / 117
页数:8
相关论文
共 67 条
[61]  
SMITH LN, 1983, IEEE T MAGN, V19, P1571
[62]   JOSEPHSON PROPERTIES OF NB3GE OXIDE/PB TUNNEL-JUNCTIONS [J].
TANABE, K ;
ASANO, H ;
MICHIKAMI, O .
APPLIED PHYSICS LETTERS, 1984, 44 (05) :559-561
[63]   SUPERCONDUCTIVE TUNNELING INTO NBN DEPOSITED NEAR ROOM-TEMPERATURE [J].
VANDOVER, RB ;
BACON, DD ;
SINCLAIR, WR .
APPLIED PHYSICS LETTERS, 1982, 41 (08) :764-766
[64]   INVESTIGATION OF HIGH-RATE MAGNETRON SPUTTERING OF NIOBIUM FILMS FOR JOSEPHSON INTEGRATED-CIRCUITS [J].
VILLEGIER, JC ;
VELER, JC .
IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) :946-950
[65]  
VILLEGIER JC, 1985, IEEE T MAGN, V21
[66]  
WEN S, UNPUB J APPL PHYS
[67]   EFFECTS OF DEPOSITION PARAMETERS ON THE PROPERTIES OF SUPERCONDUCTING RF REACTIVELY SPUTTERED NBN FILMS [J].
WOLF, SA ;
SINGER, IL ;
CUKAUSKAS, EJ ;
FRANCAVILLA, TL ;
SKELTON, EF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :411-414