THERMAL SORET DIFFUSION IN THE LIQUID-PHASE EPITAXIAL-GROWTH OF BINARY III-V COMPOUNDS

被引：6

作者：

CHIEN, CP

MATTES, BL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：648 / 655

页数：8

共 16 条

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[2]

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HSIEH JJ, 1976, I PHYS C SER B, V33, P74

[8] STEADY-STATE LPE GROWTH OF GAAS [J].

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[9] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE [J].

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[10]

MATTES BL, 1974, J CRYST GROWTH, V27, P133

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