MEASUREMENT OF PROTON-INDUCED RADIATION-DAMAGE TO CMOS TRANSISTORS AND PIN DIODES

被引：14

作者：

ZIOCK, HJ

HOFFMAN, CM

HOLTKAMP, D

KINNISON, WW

MILNER, C

SOMMER, WF

BACIGALUPI, J

CARTIGLIA, N

DEWITT, J

KALUZNIACKI, A

KOLANOSKI, H

PITZL, D

ROWE, WA

SADROZINSKI, HFW

SPENCER, E

TENENBAUM, P

FERGUSON, P

GIUBELLINO, P

SARTORI, S

机构：

[1] UNIV CALIF SANTA CRUZ,SANTA CRUZ INST PARTICLE PHYS,SANTA CRUZ,CA 95064

[2] UNIV MISSOURI,ROLLA,MO 65401

[3] IST NAZL FIS NUCL,TURIN,ITALY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 03期

关键词：

D O I：

10.1109/23.57372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As part of our program to develop a silicon tracking device for the SSC we have exposed radiation-hard CMOS transistors and PIN diodes to the 800 MeV LAMPF proton beam. The fluences accumulated in a week corresponded to the expected radiation levels of about 10 SSC years. We determine the leakage current constants for PIN diodes and threshold voltage shifts for CMOS transistors under different biasing conditions. © 1990 IEEE

引用

页码：1238 / 1241

页数：4

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