CHARACTERISTICS OF SEPARATED-GATE JFETS

被引:3
作者
NANVER, LK
GOUDENA, EJG
机构
关键词
D O I
10.1049/el:19860853
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
6
引用
收藏
页码:1244 / 1246
页数:3
相关论文
共 6 条
[1]   BARRIER MODE BEHAVIOR OF A JUNCTION FET AT LOW DRAIN CURRENTS [J].
BREWER, RJ .
SOLID-STATE ELECTRONICS, 1975, 18 (11) :1013-1017
[2]  
DAS C, 1984, THESIS KATHOLIEKE U
[3]   A HIGH-FREQUENCY BIPOLAR JFET I-2L PROCESS [J].
LUI, SK ;
MEYER, RG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1319-1323
[4]   DOUBLE-IMPLANTED SUBVOLT JFETS [J].
MALHI, SDS ;
SALAMA, CAT .
SOLID-STATE ELECTRONICS, 1982, 25 (08) :791-795
[5]   JFETS FABRICATED IN A STANDARD IC PROCESS FOR BIPOLAR-TRANSISTORS [J].
MEIJER, GCM ;
VERWEIJEN, FLJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :530-532
[6]  
SZE SM, 1981, PHYSICS SEMICONDUCTO