CHARACTERIZATION OF INP/GAINAS/INP HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY FOR HIGH-SPEED P-I-N PHOTODIODES

被引：8

作者：

CAREY, KW ^{[1
]}

WANG, SY ^{[1
]}

HULL, R ^{[1
]}

TURNER, JE ^{[1
]}

OERTEL, D ^{[1
]}

BAUER, R ^{[1
]}

BIMBERG, D ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-1000 BERLIN 12,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90352-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：558 / 563

页数：6

共 13 条

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[3] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY GAINAS ON INP [J].

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[4] VAPOR-PHASE HETERO-EPITAXY - GROWTH OF GAINAS LAYERS [J].

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MOSS, RH .

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[5]

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[6]

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[7] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

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SMITH, RG .

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[8]

LI K, 1984, 7TH INT GUID WAV OPT

[9] GAINAS PIN PHOTODIODES GROWN BY ATMOSPHERIC-PRESSURE MOVPE [J].

NELSON, AW ;

WONG, S ;

RITCHIE, S ;

SARGOOD, SK .

ELECTRONICS LETTERS, 1985, 21 (19) :838-840

[10] GAINAS/INP LARGE BANDWIDTH (GREATER-THAN-2 GHZ) PIN DETECTORS [J].

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LOGAN, RA ;

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ELECTRONICS LETTERS, 1983, 19 (16) :611-612

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