0.7 W SINGLE-DRIFT GAAS IMPATT DIODES FOR MILLIMETRE-WAVE FREQUENCIES

被引：9

作者：

ZHANG, X

FREYER, J

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 09期

关键词：

D O I：

10.1049/el:19840246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：359 / 360

页数：2

相关论文

共 6 条

[1] 50 GHZ GALLIUM-ARSENIDE IMPATT OSCILLATOR [J].

GIBBONS, G ;

GOKGOR, HS ;

WICKENS, PR ;

PURCELL, JJ .

ELECTRONICS LETTERS, 1972, 8 (21) :513-&

[2] EFFICIENT P-TYPE SI IMPATT DIODES FOR V-BAND FREQUENCIES [J].

LEISTNER, D .

ELECTRONICS LETTERS, 1981, 17 (18) :635-636

[3] SIMULATION OF GAAS IMPATT DIODES INCLUDING ENERGY AND VELOCITY TRANSPORT-EQUATIONS [J].

MAINS, RK ;

HADDAD, GI ;

BLAKEY, PA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1327-1338

[4] MILLIMETER-WAVE GAAS SCHOTTKY-BARRIER IMPATT DIODES [J].

NAWATA, K ;

IKEDA, M ;

ISHII, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :128-130

[5] DELAYED SECONDARY AVALANCHE EFFECTS IN MILLIMETER WAVE GAAS IMPATT DIODES [J].

THOREN, GR ;

DALMAN, GC ;

LEE, CA .

ELECTRON DEVICE LETTERS, 1981, 2 (01) :10-13

[6] GAAS 50 GHZ SCHOTTKY-BARRIER IMPATT DIODES [J].

WATANABE, T ;

KODERA, H ;

MIGITAKA, M .

ELECTRONICS LETTERS, 1974, 10 (01) :7-8