GAAS 50 GHZ SCHOTTKY-BARRIER IMPATT DIODES

被引：3

作者：

WATANABE, T ^{[1
]}

KODERA, H ^{[1
]}

MIGITAKA, M ^{[1
]}

机构：

[1] HITACHI LTD,CENTR RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1049/el:19740005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：7 / 8

页数：2

共 5 条

[1] 50 GHZ GALLIUM-ARSENIDE IMPATT OSCILLATOR [J].

GIBBONS, G ;

GOKGOR, HS ;

WICKENS, PR ;

PURCELL, JJ .

[2] MILLIMETER-WAVE GAAS SCHOTTKY-BARRIER IMPATT DIODES [J].

MIGITAKA, M ;

NAKAMURA, M ;

SAITO, K ;

SEKINE, K .

[3] CW MILLIMETER-WAVE IMPATT DIODES WITH NEARLY ABRUPT JUNCTIONS [J].

MISAWA, T .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (02) :234-+

[4]

NAWATA K, 1972, 4 P C SOL STAT DEV T, V2, P58

[5] DOUBLE-DRIFT-REGION ION-IMPLANTED MILLIMETER-WAVE IMPATT DIODES [J].

SEIDEL, TE ;

DAVIS, RE ;

IGLESIAS, DE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1222-+