INVESTIGATION OF THE TWO-DIMENSIONAL ELECTRON-GAS IN HGCDTE BY QUANTUM HALL-EFFECT MEASUREMENTS

被引：10

作者：

KIRK, WP ^{[1
]}

KOBIELA, PS ^{[1
]}

SCHIEBEL, RA ^{[1
]}

REED, MA ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LAB,DALLAS,TX 75265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574042

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2132 / 2136

页数：5

共 8 条

[1] ION-IMPLANTATION STUDY OF HGCDTE [J].

BUBULAC, LO ;

TENNANT, WE ;

SHIN, SH ;

WANG, CC ;

LANIR, M ;

GERTNER, ER ;

MARSHALL, ED .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :495-500

[2] CONDITIONS FOR THE QUANTUM HALL-EFFECT [J].

JOYNT, R ;

PRANGE, RE .

PHYSICAL REVIEW B, 1984, 29 (06) :3303-3317

[3]

PARKER SG, 1969, Patent No. 3486363

[4]

Schiebel R. A., 1983, International Electron Devices Meeting 1983. Technical Digest, P711

[5] QUANTIZATION OF THE HALL-EFFECT IN AN ANISOTROPIC 3-DIMENSIONAL ELECTRONIC SYSTEM [J].

STORMER, HL ;

EISENSTEIN, JP ;

GOSSARD, AC ;

WIEGMANN, W ;

BALDWIN, K .

PHYSICAL REVIEW LETTERS, 1986, 56 (01) :85-88

[6] LOCALIZATION AND THE QUANTIZED HALL RESISTANCE IN THE TWO-DIMENSIONAL ELECTRON-GAS [J].

TSUI, DC ;

ALLEN, SJ .

PHYSICAL REVIEW B, 1981, 24 (07) :4082-4082

[7] RESISTANCE STANDARD USING QUANTIZATION OF THE HALL RESISTANCE OF GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

TSUI, DC ;

GOSSARD, AC .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :550-552

[8]

VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494

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