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METASTABLE DEFECT STATES AND EQUILIBRATION TEMPERATURES IN A-SINX-H, A-SIOX-H AND A-SICX-H

被引：9
作者：
HAMED, A
FRITZSCHE, H
DENG, XM
KOHLER, S
GUPTA, R
机构：
[1] James Franck Institute, University of Chicago, Chicago, IL 60637
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0022-3093(05)80112-7
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Metastable defects are created by light exposure in amorphous silicon alloys at different exposure temperatures T(e). They are removed by annealing at an equilibration temperature T(E). In a-SiNx:H of band gap E0 = 3.4 eV the efficiency of defect creation and T(E) = 460 K are independent of T(e) between T(e) = 4 and 300K. In a-SiOx:H of band gap E0 = 3.3 eV the efficiency is constant between T(e) = 4 and 100K and then rises with T(e) up to T(e) = 350K. T(E) = 480K independent of T(e). In a-SiCx:H defects can only be created below T(e) = 150K, and T(E) = 400K. Metastable defects are studied by subgap absorption and persistent photoconductivity in multilayers.
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页码：287 / 290
页数：4
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