RADIATION EFFECTS OF VACUUM-ULTRAVIOLET LASERS IN AMORPHOUS SI3N4 FILMS

被引：11

作者：

NAKAMAE, K

KUROSAWA, K

OHMUKAI, M

KATTO, M

OKUDA, M

SASAKI, W

NOZAWA, S

IGARASHI, T

机构：

[1] UNIV OSAKA PREFECTURE, DEPT PHYS & ELECTR, SAKAI, OSAKA 593, JAPAN

[2] MIYAZAKI UNIV, DEPT ELECT ENGN, MIYAZAKI 88921, JAPAN

[3] USHIC INC, HIMEJI, HYOGO 647, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)96305-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effects of irradiation of silicon nitride films with an argon excimer laser having a capability of emitting 126 nm photons of a fluence of 10(14) per cm2 per pulse have been studied. We found that laser irradiation induces crystalline silicon precipitation accompanied with nitrogen desorption within thin surface layers of silicon nitride films. We showed that laser-induced electronic excitation played a crucial role in the process and further that the amount of precipitated silicon depends on the film surface temperature.

引用

页码：659 / 662

页数：4

共 8 条

[1]

[Anonymous], 1985, HDB OPTICAL CONSTANT

[2] ELECTRONIC-STRUCTURE AND BONDING IN SILICON OXYNITRIDE FILMS - AN XPS STUDY [J].