TIME-RESOLVED SPECTRA OF THE 1.55-EV-BAND IN GE-DOPED ALXGA1-XAS

被引:9
作者
MEJRI, H
MAAREF, H
机构
[1] Département de Physique, Faculté des Sciences
关键词
D O I
10.1063/1.345338
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report time-resolved luminescence data on the 155-eV band of Ge-doped AlxGa1-xAs with x=0.3, grown by liquid-phase epitaxy. They are interpreted in terms of donor-acceptor pair recombinations in which the donors and acceptors have a well-defined spatial separation. From the analysis of the emission line shape, the optical parameters of the pair are deduced.
引用
收藏
页码:3485 / 3489
页数:5
相关论文
共 15 条
[1]   SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709
[2]   PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].
CHIANG, SY ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991
[3]   PHOTOLUMINESCENCE MEASUREMENTS OF THE 1.55 EV BAND OF GE DOPED ALXGA1-XAS [J].
FURTADO, MT ;
VONDERWEID, JP .
SOLID STATE COMMUNICATIONS, 1985, 54 (03) :233-237
[4]   NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].
HENRY, CH ;
LANG, DV .
PHYSICAL REVIEW B, 1977, 15 (02) :989-1016
[5]   PHOTO-LUMINESCENCE STUDY OF EPITAXIAL ALGAAS LAYER GROWN FROM PRE-HEATED GA SOLUTION [J].
ISHII, M ;
ITO, A .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (03) :515-519
[6]   PHOTO-LUMINESCENCE OF GE-DOPED ALXGA1-X AS GROWN BY LIQUID-PHASE EPITAXY [J].
KANEKO, K ;
AYABE, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6337-6341
[7]  
KRESSEL H, 1978, SEMICONDUCTOR LASERS
[8]  
Shklovskii B. I., 1984, SOLID STATE SCI, V45
[9]   PHOTOLUMINESCENCE OF GAXAL1-XAS CRYSTALS GROWN BY LIQUID PHASE EPITAXY [J].
SUGIYAMA, K ;
KAWAKAMI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) :1007-&
[10]   PHOTOLUMINESCENCE OF GE-DOPED GAXAL1-XAS [J].
SUGIYAMA, K ;
SAITO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (03) :395-&