METROLOGY OF ATOMIC-FORCE MICROSCOPY FOR SI NANOSTRUCTURES

被引：46

作者：

NAGASE, M

NAMATSU, H

KURIHARA, K

IWADATE, K

MURASE, K

机构：

[1] NTT LSI Laboratories, Atsugi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 6B期

关键词：

ATOMIC FORCE MICROSCOPY; SI NANOSTRUCTURE; CRITICAL DIMENSION MEASUREMENT; METROLOGICAL METHOD; ELECTRON BEAM LITHOGRAPHY; ANISOTROPIC WET ETCHING; RECTANGULAR CROSS-SECTION;

D O I：

10.1143/JJAP.34.3382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new, practical metrological method for atomic force microscopy (AFM) is proposed to determine the dimensions of Si nano-structures. In this method, the AFM image profile is expressed as a modeling equation which includes the critical dimensions of the sample and the tip. The dimensions are obtained from part of the measured AFM image as fitting parameters of the equation. It is demonstrated that the critical dimensions of the sample and the tip obtained by this method agree well with those measured by scanning electron microscopy in the nanometer range.

引用

页码：3382 / 3387

页数：6

共 12 条

[1] ANALYTICAL DESCRIPTION OF BACKSCATTERED ELECTRON SIGNAL FOR HIGH-RESOLUTION METROLOGY [J].