SIMULATION OF SCANNING ELECTRON-MICROSCOPE IMAGE FOR TRENCH STRUCTURES

被引：6

作者：

KOTERA, M

YAMAGUCHI, S

UMEGAKI, S

SUGA, H

机构：

[1] Department of Electronic Engineering, Osaka Institute of Technology, Asahi-ku, Osaka, 535, Omiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期

关键词：

SCANNING ELECTRON MICROSCOPE; IMAGE SIMULATION; SECONDARY ELECTRON IMAGE; BACKSCATTERED ELECTRON IMAGE; TRENCH STRUCTURES;

D O I：

10.1143/JJAP.32.6281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning electron microscope images for trench structures are simulated by calculating electron trajectories with a Monte Carlo method. Electron trajectories both inside and outside the trench are fully simulated. Using this simulation, the natures of the secondary electron image and the backscattered electron image are quantified. The signal variations are shown as functions of the size of the trench, the primary electron energy, and the beam diameter.

引用

页码：6281 / 6286

页数：6

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