GROWTH OF INDIUM-PHOSPHIDE FROM INDIUM RICH MELTS

被引：8

作者：

GRANT, I ^{[1
]}

LI, L ^{[1
]}

RUMSBY, D ^{[1
]}

WARE, RM ^{[1
]}

机构：

[1] ROWLAND WARE CONSULTANCY,COTTENHAM,CAMBS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90244-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：32 / 36

页数：5

共 8 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2]

ANTYPAS GA, 1977, I PHYS C SER B, V33, P55

[3]

BROWN GT, 1981, I PHYSICS C SERIES, V60, P351

[4] THE GROWTH AND PERFECTION OF SINGLE-CRYSTAL INDIUM-PHOSPHIDE PRODUCED BY THE LEC TECHNIQUE [J].

COCKAYNE, B ;

BROWN, GT ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :9-15

[5]

ELLIOTT CR, 1981, I PHYS C SER, V60, P365

[6]

KUBOTA E, 1982, I PHYS C SER, V63, P31

[7]

RUMSBY D, 1981, 1980 SEM 3 5 MAT NOT, P59

[8] ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN INP - DETERMINATION OF THE COMPENSATION RATIO [J].

WALUKIEWICZ, W ;

LAGOWSKI, J ;

JASTRZEBSKI, L ;

RAVA, P ;

LICHTENSTEIGER, M ;

GATOS, CH ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2659-2668

← 1 →