P-CHANNEL MOSFETS IN LPCVD POLYSILICON

被引：11

作者：

MALHI, SDS ^{[1
]}

CHATTERJEE, PK ^{[1
]}

PINIZZOTTO, RF ^{[1
]}

LAM, HW ^{[1
]}

CHEN, CEC ^{[1
]}

SHICHIJO, H ^{[1
]}

SHAH, RR ^{[1
]}

BELLAVANCE, DW ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, MAT SCI LAB, DALLAS, TX 75265 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 10期

关键词：

D O I：

10.1109/EDL.1983.25767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：369 / 371

页数：3

共 9 条

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