RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES

[11] SHORT-CHANNEL EFFECTS IN 0.5-MU-M SOURCE-DRAIN SPACED VERTICAL GAAS-FETS - A 1ST EXPERIMENTAL INVESTIGATION [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 125 - 127

[12] SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 300 - 305

[13] Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[14] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 508 - 510

[15] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 588 - 590

[16] QUANTUM WELL OSCILLATORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1319 - 1321

[17] SZE SM, 1981, PHYSICS SEMICONDUCTO, P340

[18] TUNNELING IN A FINITE SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 562 - 564

[11] SHORT-CHANNEL EFFECTS IN 0.5-MU-M SOURCE-DRAIN SPACED VERTICAL GAAS-FETS - A 1ST EXPERIMENTAL INVESTIGATION [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 125 - 127

[12] SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 300 - 305

[13] Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[14] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 508 - 510

[15] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 588 - 590

[16] QUANTUM WELL OSCILLATORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1319 - 1321

[17] SZE SM, 1981, PHYSICS SEMICONDUCTO, P340

[18] TUNNELING IN A FINITE SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 562 - 564