THRESHOLD CURRENT-DENSITY OF GAAS/ALGAAS SINGLE-QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

MIYAZAWA, S

SEKIGUCHI, Y

MIZUTANI, N

机构：

[1] Canon Research Center, Astugi, 243-01, 5-1, Morinosato-Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 11B期

关键词：

LOW-TEMPERATURE GROWTH; GAAS; AIGAAS; MOLECULAR BEAM EPITAXY; SINGLE QUANTUM WELL; SEMICONDUCTOR LASER;

D O I：

10.1143/JJAP.30.L1935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the effect of substrate temperature on the threshold current density in GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy under various flux ratios. It is found that the threshold current density has W-shape dependence on the substrate temperature and exhibits minima of 600 A/cm2 and 400 A/cm2 at the substrate temperatures of 375-degrees-C and 650-degrees-C, respectively.

引用

收藏

页码：L1935 / L1937

页数：3

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