ENDOR INVESTIGATION OF SE+ IN SILICON

被引：12

作者：

GREULICHWEBER, S

NIKLAS, JR

SPAETH, JM

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 34期

关键词：

D O I：

10.1088/0022-3719/17/34/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L911 / L914

页数：4

共 13 条

[1]

DIETL J, 1981, CRYSTALS GROWTH PROP, V5, P43

[2] TELLURIUM DONORS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

ENNEN, H ;

SCHIRMER, O ;

SCHNEIDER, J ;

WORNER, R ;

HOLM, C ;

SIRTL, E ;

WAGNER, P .

PHYSICAL REVIEW B, 1981, 24 (08) :4571-4586

[3] ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3740-3745

[4] DEEP SULFUR-RELATED CENTERS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4212-4217

[5] CRYSTALLIZATION OF SILICON FROM THE SILICON-CHALCOGEN VAPOR-PHASE [J].

HOLM, C ;

SIRTL, E .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) :253-266

[6]

LUDWIG GW, 1965, PHYS REV, V137, P1520

[7] THE USE OF CLOSE SPACING IN CHEMICAL-TRANSPORT SYSTEMS FOR GROWING EPITAXIAL LAYERS OF SEMICONDUCTORS [J].

NICOLL, FH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) :1165-1167

[8] PROGRESS IN THE ANALYSIS OF DEFECT STRUCTURES WITH ENDOR SPECTROSCOPY [J].

NIKLAS, JR .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 72 (1-4) :39-53

[9] ENDOR INVESTIGATION OF TELLURIUM DONORS IN SILICON [J].

NIKLAS, JR ;

SPAETH, JM .

SOLID STATE COMMUNICATIONS, 1983, 46 (02) :121-126

[10] THE EFFECT OF DOPANT DIFFUSION VAPOR-PRESSURE ON THE PROPERTIES OF SULFUR AND SELENIUM DOPED SILICON INFRARED DETECTORS [J].

SCLAR, N .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5207-5217

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