THE EFFECT OF DOPANT DIFFUSION VAPOR-PRESSURE ON THE PROPERTIES OF SULFUR AND SELENIUM DOPED SILICON INFRARED DETECTORS

被引：35

作者：

SCLAR, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.329424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5207 / 5217

页数：11

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