CHEMICAL-IDENTIFICATION OF DEEP ENERGY-LEVELS IN SI-SE

被引：24

作者：

GRIMMEISS, HG ^{[1
]}

JANZEN, E ^{[1
]}

SKARSTAM, B ^{[1
]}

LODDING, A ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,CTR MAT SCI,S-41296 GOTHENBURG,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.327609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6238 / 6242

页数：5

共 20 条

[1] THERMODYNAMIC APPROACH TO QUANTITATIVE INTERPRETATION OF SPUTTERED ION MASS-SPECTRA [J].

ANDERSEN, CA ;

HINTHORNE, JR .

ANALYTICAL CHEMISTRY, 1973, 45 (08) :1421-1438

[2] DETERMINATION OF DEEP-LEVEL ENERGY AND DENSITY PROFILES IN INHOMOGENEOUS SEMICONDUCTORS [J].

GOTO, G ;

YANAGISAWA, S ;

WADA, O ;

TAKANASHI, H .

APPLIED PHYSICS LETTERS, 1973, 23 (03) :150-151

[3] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J].

GRIMMEISS, HG .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :341-376

[4] ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3740-3745

[5] CAPTURE FROM FREE-CARRIER TAILS IN THE DEPLETION REGION OF JUNCTION BARRIERS [J].

GRIMMEISS, HG ;

LEDEBO, LA ;

MEIJER, E .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :307-308

[6]

GRIMMEISS HG, UNPUBLISHED

[7] DIFFUSION-COEFFICIENT OF SELENIUM IN SILICON BY SHEET HALL-COEFFICIENT MEASUREMENTS [J].

KIM, CS ;

SAKATA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) :247-254

[8] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J].

KUKIMOTO, H ;

HENRY, CH ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2486-2499

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

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