DIFFUSION-COEFFICIENT OF SELENIUM IN SILICON BY SHEET HALL-COEFFICIENT MEASUREMENTS

被引:21
作者
KIM, CS
SAKATA, M
机构
[1] Department of Instrumentation Engineering, Keio University, Yokohama, Kohoku-ku
关键词
D O I
10.1143/JJAP.18.247
中图分类号
O59 [应用物理学];
学科分类号
摘要
A study of the diffusion coefficient of selenium in silicon is described. The concentration distribution of selenium is determined from sheet resistivity and sheet Hall coefficient measurements as a function of temperature, combined with layer removal, considering the fact that the carrier concentration has functional dependence on temperature, on impurity energy level, and on the concentration of donors and acceptors. The diffusion coefficient measured from the concentration of selenium double donors, 0.26 and 0.50 eV below the conduction band edge, is compared with that measured by Fuller's two-specimen method. Between 1000 and 1250°C, the temperature dependence of the diffusion coefficient can expressed by D=0.11exp [-(2.42±0.05) eV/kT] cm2/sec. © 1979 The Japan Society of Applied Physics.
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页码:247 / 254
页数:8
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