CURRENT TRANSPORT IN RELAXATION-CASE GAAS

被引：28

作者：

ILEGEMS, M ^{[1
]}

QUEISSER, HJ ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.12.1443

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1443 / 1451

页数：9

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[3]

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[4]

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[5]

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[6]

BRODOVOI VA, 1973, FIZ TEKH POLUPROV, V7, P1431

[7]

CASEY HC, 1968, T METALL SOC AIME, V242, P406

[8] CONDUCTION IN RELAXATION-CASE SEMICONDUCTORS [J].

DOHLER, GH ;

HEYSZENAU, H .

[9] PROPERTIES OF GALLIUM ARSENIDE DOUBLE-INJECTION DEVICES [J].

FERRO, AP ;

GHANDHI, SK .

[10]

GOOGH CH, 1961, J APPL PHYS, V32, P2069