A COMPLETE ANALYTIC MODEL FOR THE BASE AND COLLECTOR CURRENT IN LATERAL P-N-P TRANSISTORS

被引：4

作者：

ELTOUKHY, AA ^{[1
]}

ROULSTON, DJ ^{[1
]}

机构：

[1] UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 01期

关键词：

D O I：

10.1016/0038-1101(84)90094-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：69 / 75

页数：7

共 18 条

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ELTOUKHY AA, 1982, THESIS U WATERLOO ON

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GROVE, AS .

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[9] AN ANALYTIC MODEL FOR MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED REGIONS OF SILICON DEVICES [J].

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SHIBIB, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1018-1025

[10] A 2-DIMENSIONAL MODEL FOR CALCULATION OF COMMON-EMITTER CURRENT GAINS OF LATERAL P-N-P TRANSISTORS [J].

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