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A COMPLETE ANALYTIC MODEL FOR THE BASE AND COLLECTOR CURRENT IN LATERAL P-N-P TRANSISTORS
被引:4
作者
:
ELTOUKHY, AA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
ELTOUKHY, AA
[
1
]
ROULSTON, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
ROULSTON, DJ
[
1
]
机构
:
[1]
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
来源
:
SOLID-STATE ELECTRONICS
|
1984年
/ 27卷
/ 01期
关键词
:
D O I
:
10.1016/0038-1101(84)90094-7
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:69 / 75
页数:7
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EFFECTIVE RECOMBINATION VELOCITY AT THE NN+ INTERFACE
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SIMPLE ANALYTICAL MODEL FOR ESTIMATING DC-ALPHA OF LATERAL P-N-P TRANSISTORS
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[15]
MODELING AND MEASUREMENT OF MINORITY-CARRIER LIFETIME VERSUS DOPING IN DIFFUSED LAYERS OF N+-P SILICON DIODES
[J].
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:284
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[16]
2-DIMENSIONAL MODEL FOR LATERAL P-N-P TRANSISTOR
[J].
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.
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←
1
2
→
共 18 条
[11]
DIFFUSION IN IDEAL CYLINDRICAL AND SPHERICAL JUNCTIONS - APPARENT DIFFUSION LENGTH
[J].
HEASELL, EL
论文数:
0
引用数:
0
h-index:
0
HEASELL, EL
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(09)
:1771
-1777
[12]
NUMERICAL-ANALYSIS OF DC PERFORMANCE OF SMALL GEOMETRY LATERAL TRANSISTORS
[J].
LAST, JD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLL N WALES, SCH ELECT ENGN SCI, DEAN ST, BANGOR, CAERNS, WALES
UNIV COLL N WALES, SCH ELECT ENGN SCI, DEAN ST, BANGOR, CAERNS, WALES
LAST, JD
;
LUCAS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLL N WALES, SCH ELECT ENGN SCI, DEAN ST, BANGOR, CAERNS, WALES
UNIV COLL N WALES, SCH ELECT ENGN SCI, DEAN ST, BANGOR, CAERNS, WALES
LUCAS, DW
;
SUMERLING, GW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLL N WALES, SCH ELECT ENGN SCI, DEAN ST, BANGOR, CAERNS, WALES
UNIV COLL N WALES, SCH ELECT ENGN SCI, DEAN ST, BANGOR, CAERNS, WALES
SUMERLING, GW
.
SOLID-STATE ELECTRONICS,
1974,
17
(11)
:1111
-1118
[13]
EFFECTIVE RECOMBINATION VELOCITY AT THE NN+ INTERFACE
[J].
RAM, GV
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
RAM, GV
;
TYAGI, MS
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
TYAGI, MS
.
SOLID-STATE ELECTRONICS,
1981,
24
(08)
:753
-761
[14]
SIMPLE ANALYTICAL MODEL FOR ESTIMATING DC-ALPHA OF LATERAL P-N-P TRANSISTORS
[J].
RAM, GV
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,DEPT ELECT ENGN,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,DEPT ELECT ENGN,KANPUR 208016,UTTAR PRADESH,INDIA
RAM, GV
;
TYAGI, MS
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,DEPT ELECT ENGN,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,DEPT ELECT ENGN,KANPUR 208016,UTTAR PRADESH,INDIA
TYAGI, MS
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(01)
:62
-64
[15]
MODELING AND MEASUREMENT OF MINORITY-CARRIER LIFETIME VERSUS DOPING IN DIFFUSED LAYERS OF N+-P SILICON DIODES
[J].
ROULSTON, DJ
论文数:
0
引用数:
0
h-index:
0
ROULSTON, DJ
;
ARORA, ND
论文数:
0
引用数:
0
h-index:
0
ARORA, ND
;
CHAMBERLAIN, SG
论文数:
0
引用数:
0
h-index:
0
CHAMBERLAIN, SG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(02)
:284
-291
[16]
2-DIMENSIONAL MODEL FOR LATERAL P-N-P TRANSISTOR
[J].
SELTZ, D
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL
TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL
SELTZ, D
;
KIDRON, I
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL
TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL
KIDRON, I
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(09)
:587
-592
[17]
SEO KS, 1980, IEEE T ELECTRON DEV, V27, P295
[18]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
[J].
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
;
DEGRAAFF, HC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
.
SOLID-STATE ELECTRONICS,
1976,
19
(10)
:857
-862
←
1
2
→